Their applications will be crazy wide and the demand for them is already huge! This research project aims to increase the maximum operating voltage and their current efficiency for our transistors. As a part of the GaNLIN project, led by our Institute, we are going to develop the next generation of GaN HEMT transistors. Since we have already developed the first generation of GaN HEMT transistors in the 650V voltage class and 10A current efficiency, it is time for another one.
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